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JK9610A MOS tube test kit
JK9610A field effect tube tester
The difference between 9610A and 9612:
9610A can measure three parameters :
A: Breakdown voltage VDSS turn-on voltage VGS Gfs transconductance
B: The three parameter is only one item
9612 can measure three parameters :
A: Open voltage VGS Gfs on state resistance Ron interelectrode capacitance Cir four parameters together
B: Efficient
C: With sorting alarm, suitable for large quantities of incoming inspection
Power field effect tube tester /MOS tube tester /MOS tube sorting instrument /MOS tube matching instrument , Changzhou JK9610A field effect tube tester。
One. Summary
JK9610A type power field effect tube tester, is The utility model is a novel full digital display power field effect tube parameter testing device, Can be used for nominal current about 2-85A, The test of the main parameters of the N trench power MOSFET with power of less than 300W. It can accurately measure the breakdown voltage VDSS ,Gate turn-on voltage VGS (th) and amplification characteristic parameter transconductance Gfs . Especially the transconductance Gfs test current can reach 50A , Pulse current test , It will not cause any damage to the device even when the current is tested , It can be used to test the consistency of the field effect transistor (pairing) under the condition of high current, The instrument can be used to measure the IGBT parameters of the same current level , Instrument is also a very superior performance of electronic components pressure test device , When testing the voltage leakage current 1mA, 250uA, 25uA three block can choose , The instrument is mainly used for the quality inspection of power MOSFET and IGBT, The matching of parameters and the pressure test of other electronic components. The instrument is N channel guide tester. The instrument has the advantages of beautiful appearance, stable performance, accurate measurement, simple operation and safe and convenient use.
Two. Main technical performance
1, the breakdown voltage of VDSS measuring range: 0 - 1999V, accuracy: less than 2.5%.
2, IDSS can be divided into three options: 1mA, 250uA, 25uA.
3, open grid voltage VGS (th) measurement range: 0 - 10V. Accuracy: less than 5%.
4, Gfs transconductance test current Idm: not less than 1 - 50 A continuously adjustable accuracy: less than 10%.
5, Gfs transconductance test range: 1 - 100.
Three. Main test function
1. The breakdown voltage VDSS, VGS (th) and Gfs of the MOSFET are tested
2, the breakdown voltage of V IGBT (BR) ces, VGE (th), Gfs test.
3, the power field effect transistor and IGBT in the 50A under any current state consistency test, can be used for matching.
4, for other higher current and power field effect transistor and IGBT test: (see below)
5, a variety of crystal triode, diode , Voltage regulator , breakdown voltage test.
6, varistor voltage test etc.
Four. Test box and test line
1, the use of the test box can be easily tested TO-126, TO-220, TOP-3 and other similar packaging power MOSFET and IGBT.
2, the use of the test line can be measured other metal, module and other forms of packaging power MOSFET and IGBT
Test case
Model | JK9610A | Breakdown Voltage Vdss | Turn-on Voltage Vgs (th) | TransconductanceS Gfs | Test current | Nominal current ID | Nominal power PD | Encapsulation |
IRF640 | Basic parameter | 200V | 2-4V | ≥6.8 | 11A | 18A | 150W | TO-220 |
actual measurement parameter | 225V | 3.0V | 12 | 11A | ||||
IRF1010 | Basic parameter | 60V | 2-4V | ≥69 | 50A | 84A | 200W | TO-220 |
actual measurement parameter | 66V | 3.2V | 67 | 50A | ||||
IRF3205 | Basic parameter | 55V | 2-4V | ≥44 | 62A | 110A | 200W | TO-220 |
actual measurement parameter | 60V | 2.9V | 68 | 60A | ||||
FQP70N08 | Basic parameter | 80V | 2-4V | 41 | 35A | 70A | 155W | TO-220 |
actual measurement parameter | 86V | 3.2V | 46 | 35A | ||||
75NF75 | Basic parameter | 75V | 2-4V | 20 | 40A | 80A | 300W | TO-220 |
actual measurement parameter | 81V | 3.6V | 52 | 40A | ||||
IRFP064 | Basic parameter | 55V | 2-4V | ≥42 | 59A | 110A | 200W | TO-3P |
actual measurement parameter | 67V | 2.5V | 57 | 60A | ||||
2SK1120 | Basic parameter | 1000V | 2.5-5V | 4 | 4A | 8A | 150W | TO-3P |
actual measurement parameter | 1086V | 2.3V | 5 | 4A | ||||
G160N60 | Basic parameter | 600V | 3.5-6.5V | * | 80A | 160A | 250W | TO-247 |
actual measurement parameter | 626V | 3.9V | 35 | 60A | ||||
H40T120 | Basic parameter | 1200V | 5-6.5V | 21 | 40A | 75A | 270W | TO-247 |
actual measurement parameter | 1390V | 5.7V | 20 | 40A | ||||
60N170D | Basic parameter | 1700V | 3.5-7.5V | 60A | 200W | TO-247 | ||
actual measurement parameter | 1798V | 4.8V | 30 | 60A |